Description
Equipped with cutting-edge 3D V-NAND flash memorySequential Read Up to 530 MB/secSequential WriteUp to 460 MB/secThe 845DC PRO is equipped with Samsung's cutting-edge 3D V-NAND flash memory, which is fabricated using an innovative vertical architecture, stacking 24 cell layers on top of one another rather than trying to decrease the cells' length and width to fit today's shrinking form factors. The result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar NAND architecture.In order to handle the critical demands of the data center environment, an SSD must maintain sustained performance over extended periods of time. The Samsung 845DC PRO is specially optimized to excel in virtually any data center scenario. This enterprise-level, ultra-high-performance SSD provides unsurpassed sustained random and sequential read/write performance, particularly suitable for write-intensive data center applications Using Samsung's innovative 3D V-NAND technology and its data center optimized MDX controller.
